Growth of Single-Walled Carbon Nanotubes on Surface with Controlled Structures
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1204-K02-01
Growth of Single-Walled Carbon Nanotubes on Surface with Controlled Structures Jin Zhang*, Guo Hong, Liming Xie, Xuechun Yu, and Zhongfan Liu Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University. Beijing 100871, P. R. China
ABSTRACT Due to their excellent properties, single-walled carbon nanotubes (SWNTs) have been regarded as one of the most potential materials for future applications in nanoelectronic devices. However, there is a huge gulf between production and applications. To meet the needs for applications, SWNTs’ chirality, metallic/semiconducting property and architectures should be controlled in the growth process. Together with our recent works, we present herein a brief review on the growth of SWNTs on surface with controlled structures, including 1) Cap engineering for SWNTs growth with controlled chirality; 2) Reaction activity diversity induced growth of semiconducting SWNTs; and 3) Combination of two growth modes for fabricating SWNTs on surface with controlled architectures. INTRODUCTION Single-walled carbon nanotubes (SWNTs) have been regarded as one of the best candidates for future applications in nanoelectronic devices due to their unique structure and properties. The bottle-neck of SWNTs application in nanoelectronics is that most of the current available synthesis methods, such as arc discharge, laser ablation, and catalytic chemical vapor deposition (CVD), can only produce a mixture of metallic and semiconducting SWNTs. Moreover, these methods also cannot produce SWNTs with identical length, diameter or chirality. For both of fundamental researches and practical applications, it is highly desirable to have SWNTs with controlled structures. However, growth of SWNTs with controlled structures, especially with controlled chirality, is still in its infancy and remains a big challenge. In our previous works, we were focusing on SWNTs growth on surface, such as bimetallic catalysts for improving the growth efficiency [1], iron catalysts reactivation for efficient CVD growth with base-growth mode [2], and surfactant-resisted assembly of Fe-containing nanoparticles for site-specific growth [3]. In 2007, we found that the diameters of ultralong SWNTs on surface can be controlled by changing the temperature quickly during growth via a “kite-mechanism”. It was found that the diameter of an SWNT varied with a temperature oscillation: higher temperature led to thinner SWNT with the same catalyst particle, and vice versa [4-6]. Most importantly, it was demonstrated that electronic structures of SWNTs could be modulated along the same tubes, which would be a significant advancement toward device integration [4]. The present paper will review recent progresses about SWNTs growth on surface with controlled structures, including SWNTs with identical chirality, directly growth of semiconducting SWN
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