Heteroepitaxy of rare-earth hexa-aluminates on sapphire

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We have grown epitaxial thin films of rare-earth hexa-aluminates on basal plane sapphire from liquid precursors. LnAlnOig (Ln = Gd 3+ , Nd 3+ ) films form via the reaction of a perovskite intermediate phase and the sapphire substrate according to LnA103 + 5A12O3 = LnAlnOig. Hexa-aluminate thin films with magnetoplumbite (MP) structure grow epitaxially with (0001)mp||(0001)s,

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