High 2Deg Mobility and Fabrication of High Performance AiGaAs/GaAs Selectively Doped Heterostructure Transistors and Rin

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HIGH 2DEG MOBILITY AND FABRICATION OF HIGH PERFORMANCE AIGaAs/GaAs SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS AND RING OSCILLATORS ON Si SUBSTRATES NARESH CHAND, F. REN, J. P. VAN DER ZIEL, AND Y. K. CHEN AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974

ABSTRACT We report growth by MBE and fabrication of state-of-the-art AlGaAs/GaAs selectively doped heterostructure transistors (SDHT's) and ring oscillators on Si substrates. In MBE growth, use of minimum As4 /Ga flux ratio during initial nucleation combined with in-situ thermal cycles gave a marked improvement in material quality. Although undoped GaAs buffer layers were highly resistive and were fully depleted under a Schottky contact, a parallel n-type conduction path confined in a thin region (

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