High Dose Implantation of Nitrogen and Phosphor into Silica Glass
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HIGH DOSE IMPLANTATION OF NITROGEN AND PHOSPHOR INTO SILICA GLASS Takashi Tagami, Keiji Oyoshi and Shuhei Tanaka Tsukuba Research Laboratory, Nippon Sheet Glass Co., 5-4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
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ABSTRACT glass implanted with N+ or The surface chemistry of silica P+ ions has been studied. The X-ray photoelectron spectroscopy for silica glass implanted with N+ (XPS) spectra of N(1s) of the formation of oxynitride glass. shows the possibility the effect of the implantation of N+ and For the first time, glass has been additional Si+ on the surface chemistry of silica studied and found to be significant in increasing the nitrogen glass. The peak concentration of N concentration in the silica increases several times, and does not change even if the sample is annealed at 900'C. glass implanted with for silica The XPS spectra of P(2p) P+ ions shows two interactions, both P-O and P-P. Therefore, the for the formation of possibility XPS spectra shows the phosphosilicate glass using P+ implantation into silica glass. 1.INTRODUCTION The use of ion-implantation in many cases improves the as optical such properties surface properties of glass, quality, wearing strength and diffusion conditions can be controlled. It was reported that glass implanted with nitrogen production of low-loss optical wave can be applied to the guides[I] as well as to increasing the microhardness numbers[2]. The changes of the chemical fraction and physical properties of some glasses were also caused by network damage due to ion bombardment[3-7]. glass, we In this work, using N+ implantation into silica try to form an oxynitride glass (SiON), which has an excellent chemical durability and higher hardness as compared with other It was already reported that implanted nitrogen glasses. but and oxygen in the glass, combines with the silicon experiments for increasing the SiN concentration in the glass So, methods to increase the SiN have not been reported. Using P+ implantation concentration in the glass are discussed. we also discuss the formation of into silica glass, phosphosilicate glass (PSG). 2.EXPERIMENT glass We have examined the surface chemistry of silica implanted with 150keV N I or P + ions to a dosage of lx1017 ions/cm2. Some samples were implanted with N+ and Si+ ions to a of lx101 7 ions/cm2 . These samples were annealed up to dose a N 2 atmosphere. The evaluation of the 900°C for 60 min in glasses was carried out using secondary ion implanted silica mass spectroscopy (SIMS) and Rutherford Backscattering (RBS) to and X-ray photoelectron obtain ion related profiles, spectroscopy (XPS) to determine the nature of the chemical Mat. Res. Soc. Symp. Proc. Vol. 128. ,1989 Materials Research Society
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3. RESULTS AND DISCUSSION 3.1 The Formation of SiON A. Implantation with N + Ions Using SIMS analysis, the depth profile of N in the silica glass implanted with 150keV N+ ions to a dosage of Jx1017 2 ions/cm is obtained as shown in Fig.1. The co
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