High Photoresponsive p-Si/n-In 2 O 3 Junction Diodes with Low Ideality Factor Prepared Using Closely Packed Octahedral S
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High Photoresponsive p‑Si/n‑In2O3 Junction Diodes with Low Ideality Factor Prepared Using Closely Packed Octahedral Structured In2O3 Thin Films S. Bhuvaneswari1 · M. Seetha1 · J. Chandrasekaran2 · R. Marnadu2 Received: 20 March 2020 / Accepted: 7 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Octahedral indium oxide thin films with different precursor concentrations of 0.05, 0.075, 0.1 and 0.125 M were coated on glass substrates at 450 °C using jet nebulizer spray pyrolysis technique. Surface morphology of the prepared samples showed closely packed octahedrons for all concentrations. The measured root-mean-square value of the films was varied between 40.45 and 188.98 nm with increased precursor concentrations. From optical analysis, the calculated optical band gap was continuously decreased with increase in precursor concentrations. A slight blue shift was recorded through the PL spectrum while increasing the precursor concentration due to the oxygen vacancies. The nature of electrical conductivity of the In2O3 films was analysed. Interestingly, we have calculated two types of activation energies in the I n2O3 films one is corresponding to low temperature and another is higher temperature. Further, p-Si/n-In2O3 junction diodes are fabricated with different precursor concentrations. Particularly, the 0.075 M of p-Si/n-In2O3 junction diode recorded a minimum ideality factor of n = 2.64 under light exposed condition, confirming the photo-conducting nature of the diodes in visible wavelength range. Keywords In2O3 thin films · Spray pyrolysis · p-Si/n-In2O3 junction diode · Ideality factor
1 Introduction Photodetectors fabrication in the form of a diode structure is a popular device in the recent scenario. The semiconducting materials are selected in such a way that they respond to different wavelength ranges. One such material which can deduct and provide a spectral response in both ultraviolet and visible region is indium oxide which comes in the category of the transparent conducting oxide (TCO) materials. They are widely used in touch panels, portable and flexi gadgets, solar cells and multipurpose windows [1]. TCO with a wide band gap (> 3 eV) with optical transparency greater than 80% and high electrical conductivity make them an ideal component for optoelectronic device applications
* M. Seetha [email protected] 1
Department of Physics, Kongunadu Arts and Science College, Coimbatore 641 029, Tamil Nadu, India
Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641 020, Tamil Nadu, India
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[2–5]. These devices can simultaneously sense optical signals as well as respond electrically and thus bridge between the electronic and optical properties of materials [6–9]. Among the various TCOs, oxides of indium (In) are noteworthy because of their quick response to optical signals with chemical stability. The overlap of In 5s orbitals makes the Fermi level to be very close with conduction band minimum (CBM) and offers h
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