High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment
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High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment Moon Young Shin, Sang-Myeon Han, Min-Cheol Lee, Hee-Sun Shin and Min-Koo Han Jang-Yeon Kwon*, and Takashi Noguchi* School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea * Samsung Advanced Institute of Technology, MD Lab, Ki-Heung Eup, Yong-In , Kyoung-Ki Do, Korea Phone : +82-2-880-7992, Fax : +82-2-883-0827, E-mail : [email protected] ABSTRACT We have proposed nitrous oxide (N2O) plasma pre-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from –3V to –1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec. INTRODUCTION Active matrix liquid crystal display (AMLCD) or active matrix organic light emitting diode (AMOLED) on the flexible substrate such as plastic have attracted considerable attention. An excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) fabricated by very-low temperature process ( 300oC), it is very difficult to obtain a high quality polycrystalline silicon film and gate insulator film. Considerable efforts have been reported to obtain a high quality insulator film at low temperature less than 200oC employing sputtering and plasma enhanced chemical vapor deposition (PECVD) [2][3]. The silicon dioxide as a gate insulator deposited at the temperature less than 170oC exhibits rather poor electrical characteristics such as a large flat-band voltage and interface trap densities [4]. PECVD is widely used to deposit the gate insulator for very low temperature (
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