High Quality, Low Bandgap a-Si Films and Devices Produced Using Chemical Annealing
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High Quality, Low Bandgap A-Si Films And Devices Produced Using Chemical Annealing Vikram Dalal, Ashutosh Shyam, Dan Congreve and Max Noack Iowa State University, Dept. of Electrical and Computer Engr. and Microelectronics Research Center, Ames, Iowa 50011 ABSTRACT We report on the growth and properties of novel amorphous Silicon (a-Si:H) p-i-n devices prepared using chemical annealing with argon gas. The i layer in the p-i-n devices was grown using a layer by layer approach, where the growth of a very thin a-Si:H layer (7-30 angstroms) grown using a silane:argon mixture was followed by chemical anneal by argon ions. Repeated cycling of such growth/anneal cycles was used to produce the desired total thickness of the i layer. The thickness of the a-Si layer, and duration of the anneal time, were varied systematically. Pressure and power of the plasma discharge were also systematically varied. It was found that a thin a-Si layer,
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