Ic Compatible Processing of Si:Er for optoelectronics
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IC COMPATIBLE PROCESSING OF Si:Er FOR OPTOELECTRONICS
F. Y. G. REN*, J. MICHEL*, Q. SUN-PADUANO*, B. ZHENG*, H. KITAGAWA*l), D.C. JACOBSON**, J.M. POATE**, and L. C. KIMERLING* *
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
** AT&T Bell Laboratories, Murray Hill, NJ 07974
ABSTRACT We have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3 Si 5 is the most stable silicid formed; and it can be oxidized into Er 20 3 at high temperature under any oxidizing conditions. Among Er compounds, Er 20 3 luminesces and Er 3 Si 5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) - 101 2cm 2/s at 1300 C and - 10-15cm2 /s at 900 C, and a migration enthalpy of AHm(Er) - 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm" 3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.
INTRODUCTION The limiting factors to increased functionality of integrated circuits (ICs) are interconnection density, interconnect driver-related power dissipation and systems bandwidth. The integration of optoelectronic devices for interconnection provides an immediate solution of the above in the form of multiplexed outputs; absence of interconnect line capacitance and resistance; and an unlimited (_1015 Hz) bandwidth capacity. In addition, new capabilities in parallel architectures, immunity from electromagnetic interference and package integration present the opportunity for breakthrough applications. Hence, optical interconnection is a component on every silicon technology roadmap. The purpose of this research is to create an IC compatible process technology for optical interconnection. We report here a summary of our work on the light emitting diode (LED), optical driver. Rare earth centers emit with a sharp linewidth [1] required for high data rates. For Er:Si, AX = 0.1 A at 4.2 K and 100 A at 300 K [2]. This paper will review our results on Er:Si reactivity, diffusivity and solubility which establish silicon fabline compatibility; and will then describe the first reported room temperature sharpline electroluminescence at 1.54 pm from a silicon LED.
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address: Fukuoka Institute of Technology, Dept. Electr. Mat. Engineering, Fukuoka 811-02, Japan Mat. Res. Soc. Symp. Proc. Vol. 301. ©1993 Materials Research Society
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SILICON:ERBIUM REACTIVITY The phase stability of Si:Er in typical process ambients was determined by the evaporation of pure erbium on etched silicon substrates, followed by heat treatment in controlled ambients. Figure 1 shows the thin film X-ray diffraction data for vacuum, air and nitrogen ambients. Polycrystalline Er2O3 and ErN form easily in air (450 C, I h
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