Techniques for Localization of IC Interconnection Defects

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Techniques for Localization of IC Interconnection Defects Edward I. Cole Jr. Failure Analysis Department Sandia National Laboratories Albuquerque, NM 87185 ABSTRACT The advances in integrated circuit technology has made failure site localization extremely challenging. Charge-Induced Voltage Alteration (CIVA), Low Energy CIVA (LECIVA), Light-Induced Voltage Alteration (LIVA), Seebeck Effect Imaging (SEI) and Thermally-Induced Voltage Alteration (TIVA) are five recently developed failure analysis techniques which meet the challenge by rapidly and non-destructively localizing interconnection defects on ICs. The techniques take advantage of voltage fluctuations in a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA are scanning electron microscopy (SEM) techniques that yield rapid localization of open interconnections. LIVA is a scanning optical microscopy (SOM) method that yields quick identification of damaged semiconductor junctions and determines transistor logic states. SEI and TIVA are SOM techniques that rapidly localize open interconnections and shorts respectively. LIVA, SEI, and TIVA can be performed from the backside of ICs by using the proper photon wavelength. CIVA, LECIVA, LIVA, TIVA, and SEI techniques in terms of the physics of signal generation, data acquisition system required, and imaging results displaying the utility of each technique for localizing interconnection defects. In addition to the techniques listed above, the Resistive Contrast Imaging (RCI) for localizing opens on metal test patterns will be described as a starting point for the “IVA” technologies. RESISTIVE CONTRAST IMAGING Resistive Contrast Imaging (RCI) generates a relative resistance map between two test nodes of a passivated integrated circuit [1]. The map generated will display buried conductors on an integrated circuit and may be used to localize open conductors. RCI obtains resistance information by using the integrated circuit as a complex current divider. Figure 1 displays the electron beam interaction products between a passivated integrated circuit and a 10-keV primary electron beam. To obtain RCI information the primary electron beam energy is increased until the tip of the interaction volume intersects the buried conductor of interest. A portion of the primary electron beam current will be injected into the conductor. The relative resistance between the electron beam position on the circuit and the test nodes determines the direction and amplitude of current flow. The current, on the order of nanoamps, is amplified and used to make a resistance map of the conductors.

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Unfortunately, not all internal conductors with defects will be identified using RCI. Escape from detection occurs when the current paths from the def

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