III-N Epitaxial Growth for Nitride Devices
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III-V Epitaxial Growth for Nitride Devices Russell Dupuis, Theodore Chung, Wonseok Lee, Peng Li, Jae Limb, Jae-Hyun Ryou, and Dongwon Yoo Center for Compound Semiconductors, School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332-0250, USA ABSTRACT Various GaN-based device structures were grown on (0001) sapphire and 6H-SiC substrates by metalorganic chemical vapor deposition. The device structures of this study include a variety of p-n junction-based devices, such as InGaN/GaN multiple-quantum-well green light emitting diodes, GaN p-i-n vertical rectifiers, and GaN/InGaN heterojunction bipolar transistors. This paper describes the epitaxial growth and device performance characteristics of these device structures. We have developed state-of-the-art growth techniques for the materials that are critical for high-performance electronic and optoelectronic devices. High-performance InGaN HBTs, high-voltage GaN rectifiers and long-wavelength green LEDs have been epitaxially grown, fabricated, and characterized. The details of the material growth, device fabrication, and device characterization will be presented.
INTRODUCTION In recent years, the development of III-nitride-based devices for photonic and electronic applications has been driven by the useful and superior properties of these materials for several device applications and III-N technology has been successfully applied to many commercial markets. For example, blue light-emitting diodes (LEDs), white LEDs (based on blue-LED excited phosphors), violet laser diodes (LDs), and heterostructure field-effect transistors (HFETs) have been developed for practical applications. However, there are several types of IIInitride-based devices that potentially have superior characteristics that await breakthroughs in order to achieve practical device applications: e.g., heterojunction bipolar transistors (HBTs), high efficiency UV and green and longer (GAL) wavelength LEDs and LDs, high-power hightemperature rectifiers, quantum-cascade lasers (QCLs), and visible or UV vertical-cavity surfaceemitting lasers (VCSELs), to name a few. For the development of III-nitride devices having new applications or improved characteristics, epitaxial and device structural concepts and designs, material growth, and device fabrication are involved and each of these elements plays an important role. In many cases, however, the epitaxial growth development is considered to be a major technological barrier and primary breakthroughs related to improved epitaxial growth needs to be made for the successful device demonstration. This paper describes the epitaxial growth development and device performance characteristics of III-nitride-based devices, such as HBTs, vertical p-i-n rectifiers, and high-efficiency green LEDs which have been developed in the Center for Compound Semiconductors at Georgia Tech.
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EXPERIMENTAL DETAILS MOCVD epitaxial growth and materials characterization The materials used in this study we
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