Impact of work function on analog/RF and linearity parameters in step-FinFET
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ORIGINAL PAPER
Impact of work function on analog/RF and linearity parameters in stepFinFET R Saha1*, B Bhowmick2 and S Baishya2 1
Electronics and Communication Engineering Department, Malaviya National Institute of Technology Jaipur, Jaipur, Rajasthan 302017, India 2
Electronics and Communication Engineering Department, National Institute of Technology Silchar, Silchar, Assam 788010, India Received: 15 August 2019 / Accepted: 29 June 2020
Abstract: The impact of work function (/M) of metal gate in a step-FinFET on RF/analog and linearity parameters was studied using Sentaurus Technology Computer-Aided Design simulator. The impact of /M on RF/analog figure of merits like drain current (ID), transconductance (gm), output conductance (gd), gate capacitance (Cgg), transconductance generation factor (TGF = gm/ID), cutoff frequency (ft), gain (gm/gd), and gain transconductance frequency product was focused. Furthermore, the effect of /M on the linearity parameters gm2, gm3, VIP2, VIP3, IIP3, and 1 - dB compression point was also discussed. It was seen that improvement in RF/analog and linearity performance can be achieved by using a low-value metal gate work function (/M). Keywords: Analog performance; Linearity performance; RF performance; Step-FinFET
1. Introduction The primary concern of downscaling MOS transistor is the reduction/loss of electrostatic integrity of the device due to severe short channel effects (SCEs). To alleviate these undesirable SCEs, multigate devices like FinFET [1, 2] emerged. The fundamental principle of FinFET devices is the enhanced gate control with multiple gates, which results in improved subthreshold swing (SS) and a reduced drain induced barrier lowering (DIBL) effect [3]. To improve the performance of FinFET, various structures like cylindrical FinFET [4], Pie gate bulk FinFET [5], OmegaFinFET [6], dual material gate (DMG) FinFET [7], and triple material gate (TMG) FinFET [8] have been investigated. Likewise, step like fins, called step-FinFET, has superior electrical parameters compared to conventional structure [9]. On the other hand, from application point of view, it is very crucial to realize a device as circuit element, and therefore, it is very important to analyze the RF/analog and linearity performance of the device. As expected, a multiple gate device yields an improved cutoff frequency [10]. Due to less corner effect, gate all around (GAA) MOSFET
poses better SCEs, which in turn, leads to improved RF/ analog performances [11]. Cutoff frequency is improved with fin width [12]. Rectangular GAA FinFET yields maximum transconductance, while the cylindrical GAA FinFET has maximum capacitance [13]. RF/analog performances of high-k gate stack junctionless FinFET have been explored [14]. Furthermore, it has been found that the DMG and TMG FinFETs have better RF performance [15]. In our recent work, we have reported the effect of temperature on RF/analog and linearity performance through TCAD simulator in DMG FinFET [16]. Step-FinFET has many advantages over its conventional co
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