Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS 2 ) Electrolyte Gated Thin-Film Transistor
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MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.311
Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated ThinFilm Transistor Eleonora Macchia,1 Alla Zak,2 Rosaria Anna Picca, 1 Kyriaki Manoli ,1 Cinzia Di Franco, 3 Nicola Cioffi, 1 Gaetano Scamarcio,3,4 Reshef Tenne,5* and Luisa Torsi1,6* Dipartimento di Chimica, Università degli Studi di Bari “A. Moro”, Bari, Italy
1
2
HIT-Holon Institute of Technology, Holon, Israel
3
CNR - Istituto di Fotonica e Nanotecnologie, Sede di Bari (I)
Dipartimento di Fisica “M. Merlin” - Università degli Studi di Bari – “Aldo Moro” - Bari (I)
4
5
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
6
Abo Akademi Univeristy, Turku, Finland
* [email protected], [email protected]
ABSTRACT
This work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the inwater operational stability of the device.
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INTRODUCTION: Solution-processed semiconductor materials have offered an attractive route to flexible electronic devices because of their potential contribution to lowcost and large-area fabrication of arrays and circuits via mass manufacturing rollto-roll processes [1]. Among flexible electronic devices, thin-film transistors (TFT) have been widely explored for their versatility in a broad range of applications, such as active-matrix displays, smart electronic and photonic surfaces, imperceptible and wearable electronics, robotic skin and sensors, biological and medical devices [2-8]. Besides, the performances of solution-processed organic or inorganic semiconductor materials have undergone remarkable progress due to intensive research efforts in materials synthesis, process optimization and fundamental investigation on devices’ functioning principles [9, 10]. In this context, dispersing ntype nanomaterials in a p-type polymer matrix to obtain solution-processed devices with high mobility is of interest both fr
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