In as a Surfactant for the Growth of AlGaN/GaN Heterostructures by Plasma Assisted MBE
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!
L6.1.1
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) ,
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Coverage (ML)
6 5 4 3
Normalized tD
7 1
0.1 1
In on GaN In on AlN 10
100
1000
In Deposition Time (s)
2 1
TS = 680ºC
0 0.01
0.1
1
In Flux (ML/s)
'( )* 6 5 ( ) 6 ! ) # ) ! ( )
) 8 !
8 ( 8 ) 6
(
# 6 8 $ ! ) ) ) ) ( 6 5
H ( 5 ) D ! ( 6 7 ) 8 8 ) # ; J G01C% ) )( 7 9 ! ! ( 8 $7 ! 7 $ $ 9$ ≥ 1 2: ) 8 !7 ! 7 ) 5 !8 8 ( G01I% ! 7 ( 6 8 $ 8 ∼1 10 -) 7 8 ! # ! 8 ( 8 8 ( ! # ) ( ( 6 8 7 ) 7( = ) 6 ) ( 8 # )) 7 # ) 8 ) 6 8 $
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G01C% 6 8 ( 6 ! # ) )) 8 8
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) (
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8 ( # 8 )) 8 ( ( ) ()! ) ( ) 8 !6 () # 6 ! ) 7(8 !8 ( ( )
5 7 8 ) 8
=
1)
L6.1.3
1
1
In on GaN
In on AlGaN
2 ML
2 ML
1 ML
In Flux (ML/s)
In Flux (ML/s)
In Accumulation
0.1
Data Loading...
