In as a Surfactant for the Growth of AlGaN/GaN Heterostructures by Plasma Assisted MBE
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!
L6.1.1
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Coverage (ML)
6 5 4 3
Normalized tD
7 1
0.1 1
In on GaN In on AlN 10
100
1000
In Deposition Time (s)
2 1
TS = 680ºC
0 0.01
0.1
1
In Flux (ML/s)
'( )* 6 5 ( ) 6 ! ) # ) ! ( )
) 8 !
8 ( 8 ) 6
(
# 6 8 $ ! ) ) ) ) ( 6 5
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5 7 8 ) 8
=
1)
L6.1.3
1
1
In on GaN
In on AlGaN
2 ML
2 ML
1 ML
In Flux (ML/s)
In Flux (ML/s)
In Accumulation
0.1
Data Loading...
