In Situ Parametric Investigation of the Mechanism of Diamond Film Deposition from Low Energy Ion Beams
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IN SITU PARAMETRIC INVESTIGATION OF THE MECHANISM OF DIAMOND FILM DEPOSITION FROM LOW ENERGY ION BEAMS
Y. LIFSHITZ *, **, S. R. KASI *, AND J. W. RABALAIS* *University of Houston, Department of Chemistry, Houston, Texas 77204-5641 **On sabbatical leave from Soreq NRC, Yavne 70600, Israel ABSTRACT A general scheme for the analysis of deposition from Successful hyperthermal (10-5000 eV) species is presented. deposition involves consideration of species range, maximum local concentration obtainable, trapping efficiency, radiation Examples of in situ damage, and sputtering efficiency. parametric investigations of carbon deposition performed with a controlled mass selected UHV ion beam facility are presented. A subplantation model for diamond film deposition XRD evidence for epitaxial growth of is discussed. diamond(lll) on Si(lll) is provided. INTRODUCTION are used Hyperthermal species (energy -1-5000 eV) extensively in film deposition technology in the form of plasma and ion beam techniques for fabrication of different films that include semiconductors, metals, and ceramics [1-6]. The unique advantages of using such species include: (i) epitaxial growth of crystalline films at low substrate (ii) production of metastable (sometimes temperatures [7-9], achieving increased film density new) phases [1-6], and (iii) and hardness [1-6]. Carbon containing hyperthermal species are also widely used [2,3,10,11] for production of films with interesting properties that can vary between those of the two most common carbon allotropes, namely graphite, the stable phase, and diamond, the metastable phase that usually necessitates high pressure and temperature conditions for its Since the work of Aisenberg and Chabot [13], formation [12]. many ion and plasma deposition techniques have been applied for deposition of carbon films. Hard, transparent, insulating carbon films, sometimes including a cubic diamond constituent have been deposited [2,3,10-17]. Most of the practical systems that are used for deposition from hyperthermal species have a complex chemicalphysical nature where the different primary deposition parameters have a wide distribution and are difficult to
Mat.Res. Soc. Symp. Proc. Vot.128. t1989 Materials Research Society
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define and to control [1-6]. The impinging species usually include a mixture of different ions, free radicals, and atoms with a large spread of energy distributions and differing angles of incidence. Most of these systems operate under only high vacuum conditions (P > 10-7 torr). Some of the processes involve a complex mixture of both hyperthermal and thermal species for deposition. Due to this complexity, the field of deposition from hyperthermal species is characterized by insufficient fundamental understanding. It has been recognized [1-6] that parametric studies by means of controlled, mass selected ion beam deposition (MSIBD), preferably under UHV conditions, combined with in situ diagnostics are essential for the further development of this promising field. The Houston facility [11,17,18] c
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