Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases
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Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases Hamad A. Albrithen1, Gale S. Petrich2, Leslie A. Kolodziejski3, Abdelmajid Salhi4 and Abdulrahman A. Almuhanna4. 1
Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia.
2
Research Laboratory of Electronics, MIT, Cambridge, Massachusetts.
3
Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts.
4
National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia. ABSTRACT We report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl2, BCl3, and SiCl4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl4+Cl2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.
INTRODUCTION The interest in group III-Sb compound semiconductor has been increasing due to their importance in many applications and advanced technologies. Among the main applications of this family of semiconductors is the ability to construct devices suitable for the mid-infrared regime of the electromagnetic spectrum. This in fact requires deep understanding of appropriate processes needed to fabricate the devices, including material stoichiometries, growth conditions, doping, etching parameters, and etc. Antimonide semiconductors have been etched by several techniques. The main methods for etching are wet and dry etchings. (1) Other methods, such as focus ion beam and laser etchings, have been demonstrated as well; however, they are less practical for massive production. (2) Many groups have reported the ICP-RIE etch of AlGaSb(001) and GaSb(001) using different gases and sample holders. Swamanathan et al. reported the use of SiCl4+BCl3 gas mixture to achieve smooth side walls. (3) In their system they used Si wafer as a sample holder. Peake et al. utilized BCl3 gas to perform their etching on quaternary III-Sb compound. (4) Some group considered organic gases as well as chlorine gases. (1) (5)
In this paper, etching of GaSb(001) wafer by inductively coupled plasma reactive ion etcher (ICP-RIE), using a Si-free sample holder without organic gases, is presented. This has requi
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