Investigation of effects of ion beam irradiation on properties of magnesium oxide films
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0908-OO14-03.1
Investigation of effects of ion beam irradiation on properties of magnesium oxide films Yasuhiko Morimoto1, Yoshikazu Tanaka1,2, Ari Ide-Ektessabi1,3 1
Graduate School of Engineering, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto
606-8501, Japan 2
Kyoto Thin-Film Materials Institute, Design and Development Center, Sanwa Kenma, Ltd., 56-1, Otake, Okubo-cho, Uji City, Kyoto, 611-0033 Japan 3
International Innovation Center, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto
606-8501, Japan ABSTRACT Magnesium oxide (MgO) film is commonly used as protecting layer for alternative current plasma display panels (AC-PDPs). Low energy ion induced secondary electron emission coefficient (γ) is one of the important factors to improve performance of AC-PDPs. The aim of this study is to prepare MgO films with high γ using ion beam assisted deposition (IBAD). The film composition, density, and crystal orientation were also investigated. The results suggest that MgO films with high γ can be obtained using IBAD. On the other hand, as the assisted ion beam energy increased to more than 500eV during deposition, (200)-oriented film with low γ grew preferentially and then the γ decreased. INTRODUCTION Alternative current plasma display panels (AC-PDPs) are being recognized as large-size, high-brightness flat panel displays [1]. Their advantages are high resolution, fast response, and wide viewing angle, which can now compete with those of cathodic ray tubes (CRTs) and liquid crystal displays (LCDs). One of the key factors for improvement of AC-PDPs performance is secondary electron emission coefficient (γ) of protecting layer. The protecting layer plays an important role in preventing energetic plasma particles from bombarding the dielectric layer over the electrodes on the front glass. The protecting layer directly is exposed to discharge space, and thus its properties influence the discharge characteristics such as luminous efficiency and lifetime. Especially, the high secondary emission provides the discharge space with sufficient electrons for low breakdown voltage and quick response [2]. Although it is widely known that magnesium oxide (MgO) film has a better characteristics as the protecting layer than other materials, some of the properties of MgO are still not well studied. The low energy ion induced γ, in particular in the case of insulator films such as MgO, is
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an important field which has not been clarified yet. Hence, there is a large dispersion in the γ values reported by researchers and it is difficult to draw any quantitative conclusion [3-5]. This can be attributed to the difficulty of generating low energy ion beam and the adverse influence of film charge up phenomenon on the measurement [6]. The physical properties of the MgO film, such as elemental ratio, density, and crystal orientation have strong relationship to the γ, and these physical properties are dependent on the method and the conditions of the film preparation [4,7]. To prepare MgO films of excellent performance,
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