Investigation of the near field distribution in circular nanostructures using Stokes polarization states
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Investigation of the near field distribution in circular nanostructures using Stokes polarization states E.H. Khoo · I. Ahmed · Z. Guo · V. Dixit · M.T.W. Ang · E.P. Li
Received: 29 April 2013 / Accepted: 30 April 2013 / Published online: 10 May 2013 © Springer-Verlag Berlin Heidelberg 2013
Abstract In this paper, the near field distribution patterns formed from nanostripe corral and half spiral are investigated. Various near field distribution patterns are generated owning to the interference of propagating surface plasmon waves that emerged from the nanoslits or nanostripe. The half spiral nanoslits are illuminated with Stokes polarizations. Each polarization state shows a different field pattern at different locations on the surface of metal film. This is due to the excitation of surface plasmon waves at different parts of the nanostructures when illuminated with different types of polarization states. The same Stokes polarization states are also illuminated on a nanostripe corral structure. In this case, dipolar field distributions are observed when illuminated with different linear polarization states, while optical vortices are observed for circular polarization. It is believed that these interesting field patterns due to different arrangements of nanostructures could be used for near field imaging and polarization sensing.
1 Introduction The rapid evolution of microprocessors craves for the development of ever faster and tinier electronic devices. While the E.H. Khoo () · I. Ahmed · Z. Guo · V. Dixit · M.T.W. Ang · E.P. Li Electronics and Photonics Department, A*STAR Institute of High Performance Computing, 1 Fusionopolis Way, Connexis, Singapore 138632, Singapore e-mail: [email protected] Fax: +65-6463-5176 Z. Guo Engineering Science Program, Faculty of Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore
electronics satisfies the requirement of compactness, it lacks the speed for rapid processing and data transfer [1]. On the other hand, optical devices enable fast data transmissions, but are generally too huge to be compatible with on-chip electronics. Therefore, concerted efforts have been invested in the search for possibilities of integrating miniaturized optical devices with electronics to produce a compact and high-speed circuit for data transmission, rapid processing, and high-resolution imaging. However, classically the manipulations of light have been restrained by the Abbe diffraction limit, which restricts the device size below one-half of the wavelength [2]. A number of techniques, such as nearfield scanning optical microscopy (NSOM), and stimulated emission depletion (STED), has been invented to go beyond the diffraction limit. They have already found their applications in high-resolution microscopy and lithography [3], but those techniques are still excessively complicated and costly for mass production of nanosized devices [4]. Hence, a method that truly merges nanooptics and electronics on a single chip is yet to be discovered. Many re
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