Ion Beam Lithography And Resist Processing for Nanofabrication
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0983-LL01-02
Ion Beam Lithography And Resist Processing for Nanofabrication Khalil Arshak1, Stephen F. Gilmartin2, Damien Collins2, Olga Korostynska1, Arousian Arshak3, and Miroslav Mihov4 1 ECE, University of Limerick, ECE Dept., UL, Limerick, Ireland 2 Wafer Fabrication, Analog Devices, Limerick, Ireland 3 Physics, University of Limerick, Limerick, Ireland 4 Fab24, Intel, Liexlip, co. Kildare, Ireland ABSTRACT The International Technology Roadmap for Semiconductors (ITRS) identifies the shrinking of lithography critical dimensions (CDs) as one of biggest challenges facing the semiconductor industry as it progresses to smaller geometry nodes. Nanolithography, the patterning of masking CDs below 100nm, enables both nanoscale wafer processing and the exploration of novel nanotechnology applications and devices. Focused Ion Beam (FIB) lithography has significant advantages over alternative nanolithography techniques, particularly when comparing resist sensitivity, topography effects, proximity effects and backscattering. FIB lithography uses the implantation of ions, such as Ga+, in its masking process. Ions implanted into resist in this manner typically have shallow penetration depths (
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