Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration
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Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration L. FU, H.H. TAN, M.I. COHEN and C. JAGADISH Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia L.V. DAO and M. GAL School of Physics, University of New South Wales, Sydney, NSW 2052, Australia NA LI, NING LI, X. LIU, W. LU and S.C. SHEN Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China ABSTRACT Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ~5x1016 cm-2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.
INTRODUCTION Quantum well intermixing has drawn considerable attention in recent years for integration of optoelectronic devices [1-3]. Impurity induced disordering (IID) and impurity free vacancy disordering (IFVD) have been widely used to modify the shape of the quantum wells, in turn their electrical and optical properties [4-7]. However, in the case of impurity induced disordering, residual impurities are detrimental to the performance of devices. In the case of IFVD, defects are produced in the near surface region [8,9] and defect diffusion length should be large enough to reach the quantum wells in the active regions of devices which are often 1-2 micron deep. Ion implantation is a versatile technique and allows introduction of defects in selected regions with defect distribution peaking in the region of interest by choosing appropriate ion energy, dose etc. Recently, ion implantation induced intermixing has been used to tune the emission wavelength of quantum wells and to enhance light emission from V-groove quantum wires [10-12]. In this paper, we review the issues associated with implantation induced intermixing in GaAs/AlGaAs and InGaAs/AlGaAs quantum wells and apply this technique to tune the emission wavelength of quantum well lasers. Intermixing has also been used to tune the detection wavelength of quantum well infrared photodetectors.
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EXPERIMENTAL The GaAs/AlGaAs, InGaAs/GaAs and InGaAs/AlGaAs quantum well structures and InGaAs quantum well laser structures used in this study were grown by metal organic vapor phase epitaxy (MOVPE) on semi-insulating and n+-GaAs (100) substrates, respectively. Quantum well infrared photodetector structures were grown by molecular beam epitaxy on semi-insulating (100) GaAs substrates. Proton irradiation was carried out at room temperature using 40 keV Protons for q
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