• PDF / 340,910 Bytes
• 6 Pages / 420.48 x 639 pts Page_size
• 78 Downloads / 134 Views

DOWNLOAD

REPORT

---

ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON WITH A GRAPHITE RADIATION SOURCE S. R. WILSON, R. B. GREGORY AND W. M. PAULSON SRDL, Motorola, Inc., 5005 E. McDowell Road, Phoenix, Arizona, USA A. H. HAMDI AND F. D. McDANIEL Dept. of Physics, North Texas State University, Denton, Texas, USA ABSTRACT Both (100) and (111) Si wafers were implanted with As, P or B to doses from 10 3 to 1016 /cm 2 and annealed with a Varian IA200 isothermal annealer. The anneal occurs in a vacuum using infrared radiation for exposure times of 5 to 30 sec. Sheet resistance (Rs), Hall effect, RBS and SIMS were used to analyze the wafers. For each dopant a decreasing Rs occurs with increasing exposure time until a minimum value is reached. Longer anneals produce increased dopant diffusion, and the Rs for As and P implanted wafers increased unless the wafer was capped with 0.05 um of SiO2 which prevents a loss of dopant. The results for (100) wafers are better than for (111) with As doses 10 15 /rmZ the (100) and (111) results are comparable. The As implinted, isothermally annealed layers were thermally stable for As concentrations