Large area flexible electronics fabrication by selective laser sintering of nanoparticles with a scanning mirror
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Large area flexible electronics fabrication by selective laser sintering of nanoparticles with a scanning mirror Seung H. Ko1,2*, Heng Pan1, Nico Hotz 1, Costas. P. Grigoropoulos1 1 Laser Thermal Lab, University of California, Berkeley, California 94720-1740, USA. 2 Applied Nano Tech & Science lab, KAIST, Daejeon, Korea. ABSTRACT The development of electric circuit fabrication on heat and chemically sensitive polymer substrates has attracted significant interest as a pathway to low-cost or large-area electronics. We demonstrated the large area, direct patterning of microelectronic structures by selective laser sintering of nanoparticles without using any conventional, very expensive vacuum or photoresist deposition steps. Surface monolayer protected gold nanoparticles suspended in organic solvent was spin coated on a glass or polymer substrate. Then low power continuous wave Ar-ion laser was irradiated as a local heat source to induce selective laser sintering of nanoparticles by a scanning mirror system. Metal nanoparticle possessed low melting temperature ( 4” wafer) using scanning mirror to demonstrate current technology for industry level fabrication. INTRODUCTION The electric circuit fabrication on a polymer substrate has gained significant interest as a pathway to low cost or large area electronics. [1,2] The conventional vacuum deposition and photolithographic patterning methods are well developed for inorganic microelectronics. However, flexible polymer substrates are chemically incompatible with resists, etchants and developers used in conventional IC processing. In practice, conventional IC fabrication processes are subject to limitations, in that they are multi-step, involve high processing temperatures, toxic waste and are therefore expensive. Furthermore, the increasing size of electronic devices such as displays poses great difficulty in adapting standard microfabrication processes, including lithographic patterning. The high resolution direct printing technique is of particular interest as an alternative to conventional vacuum deposition and photolithographic patterning of various functional films such as gate electrodes, gate dielectrics, source and drain contacts, and active semiconductor layers. [1] Among direct printing techniques such as micro contact printing (μ-CP) [1,3-4], thermal imaging [5], solid state embossing [6], screen printing [7,8], drop-on-demand (DOD) inkjet printing [9-12,15-19] and laser induced forward transfer (LIFT)[13-14], inkjet direct writing has emerged as an attractive direct patterning technique. This is chiefly because the fully data driven and maskless drop-on-demand (DOD) inkjet processing are more versatile than other direct printing methods. Despite all advantages, the resolution of the inkjet process is limited to the order of 20-50 μm [15-16] and the material employed is typically a conducting polymer that
has intrinsically high resistivity (by 2 or 3 orders higher than metal). [15-17] Although it is preferred to use metal electrodes and interconnec
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