Laser and Electron Beam Interactions with Solids
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LASER AND ELECfTR INTERACTIONS
Professor N. Bloembergen The symposium consisted of nine non-equilibrium processing half-day sessions and a late-news techniques for the fabrication of poster session in four days, during semiconductor devices and the which 18 invited and 89 contributed alteration of the materials properties papers were presented, along with 21 of metal and insulators. posters, for a total of 128 A significant fundamental question presentations. Authors represented concerning the state of silicon 34 American and 33 foreign following the absorption of short institutions. Thirteen foreign nations (10~7 to 10~u S), intense laser pulses were represented with a total of 44 was settled in the opening session. papers. Attendance topped 400 Previous symposia in this series have people. been concerned with whether The symposium attracted absorption of the energy from the prominent scientists from around the laser pulse into the electronic system world including the 1981 Nobel of the semiconductor is transferred to phonons (lattice Laureate in Physics, Prof. N. quickly Bloembergen from Harvard vibrations) and thus leads to melting University, who gave the opening of the near surface; or whether the paper. Papers at the conference absorbed energy remains in the addressed topics ranging from the electronic system in the form of a very fundamental aspects of laser, hot, dense plasma but the lattice remains cool, as electron and ion beam interactions temperature proposed by J. A. Van Vechten with solids to applications of these
PAGE 4 — MRS BULLETIN, JANUARY/FEBRUARY 1982
(IBM). Prof. Bloembergen and his co-workers presented convincing1 evidence from measurements ofe charged particle emissions, thermally assisted photo-emission, time- and • space-resolved reflectivity and phas«* changes, that the energy transfer to I phonons was rapid and that the* \ surface melts. B. C. Larson (ORNL> S presented nanosecond-resolution, •} synchrotron X-ray measurements of ; the near-surface structure of silicon •• during the laser pulse which showed J that melting occurred. J. C. Phillips* | (Bell Laboratories) presented the. j microstructural limitations of the two models, and in general a variety of time- and space-resolved studies were, presented in regular and late-news sessions which left little doubt that ,, the thermal melting model is the. correct physical process. The extremely rapid melting antf recrystallization rates possible with these new techniques have lead to new insights into a number of fundamental crystal growth and rapicj. solidification phenomena. J. M. Poate (Bell Laboratories) and C. W: White (ORNL) investigated rapid,
MAGNETIC AND OPTICAL MATERIALS FOR INFORMATION STORAGE
TRON BEAM SOLIDS non-equilibrium crystal growth phenomena using pulsed lasers, and computer modeling calculations of these rapid solidification effects were presented by P. Baeri (Catania, Italy). A. G. Cullis (RSRE, England) and J. Narayan (ORNL) presented results on phase transformations, def
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