Nanofabrication Based on Ion Beam-Laser Interactions with Self-Assembly of Nanoparticles
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1020-GG06-06
Nanofabrication Based on Ion Beam-Laser Interactions with Self-Assembly of Nanoparticles N. Kishimoto1, K. Saito1, Jin Pan2, H. Wang1, and Y. Takeda1 1 Quantum Beam Center, National Institute for Materials Science, 3-13 Sakura, Tsukuba, 3050003, Japan 2 Univ. of Tsukuba, Tsukuba, Japan ABSTRACT Ion beam-based techniques offer various possibilities for robust spatial control of nanoparticles. Since ion implantation is inherently good at depth control of solutes or nanoparticles, additional lateral control may lead to 3D control of nanoparticles. We pursue a lateral-control method of nanoparticle assembly by controlling photon-energy field under ion implantation. Laser is irradiated into a-SiO2, either sequentially or simultaneously with ion implantation. Ions of 60 keV Cu- or 3 MeV Cu2+ and photons of 532 nm are used to study effects on nanoparticle evolution. Simultaneous laser irradiation under ion implantation enhances surface plasmon resonance (SPR), i.e., nanoparticle precipitation, while sequential laser irradiation of 532 nm tends to cause a decay of SPR, i.e., dissolution of Cu nanoparticles. The energy-field perturbation of laser, interactive with nanoparticle evolution, can be used for controlling nanoparticle assembly.
INTRODUCTION Ion beam-based techniques offer various possibilities for robust spatial control of nanostructures, either in a self-assembling- [1] or in a controlled manner [2, 3]. In order to accomplish the ion-beamed-based nanofabrication for industrial applications, one of the most important targets is 3D spatial control of nanostructures or nano-doping, utilizing characteristic advantages of ion beam methods. Towards the 3D spatial control of nanostructures, we have to carry out not only the instrumental development with a high resolution less than a few nm, but also materials scientific research on in-beam- [4] or post-implantation kinetic processes. Among various possible applications, metal nanoparticles embedded in insulators are one of the most attractive options, since the ion implantation technique is originally suitable for injection of immiscible metal ions into transparent substrates. Moreover, recent studies have revealed fascinating plasmonic functions due to the surface plasmon resonance [5], such as ultrafast nonlinear devices [6], near-field optical waveguides [7], biosensors [8] and so on. Since ion implantation is inherently good at depth control of solutes or nanoparticles, additional lateral control should result in 3D control of nanoparticles or nano-doping. In principle, two kinds of approach for the lateral control are possible: one is patterning the ion/atom supply (supply control) such as masked implantation [9], FIB [10], Ion Projection Lithography (IPL) [2,3], etc. and the other is patterning interactive fields with solutes/precipitate states (perturbation control) such as photon, phonon fields, mechanical stress fields, etc. For instance, either photonenergy perturbation [11] or nano-indentation-induced perturbation [12] tends to cause precipitati
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