Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation
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0913-D03-13
Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation Y. Y. Yang1, C. H. Huang1, Y. -K. Hsu1, S. -J. Jeng1, C. -C. Tai2, S. Lee1, H. -W. Chen1, Q. Gan3, C. -S. Chu3, J. -H. Ting4, C. S. Lai5, and T. -H. Lee1,2 1
Dept. of Mechanical Engineering, National Central University, Chung-Li, Taiwan
2
Inst. of Materials Science and Engineering, National Central University, Chung-Li, Taiwan
3
United SOI Corporation, Berkeley, California, 94707
4
National Nano Device Laboratories, Hsinchu, Taiwan
5
Dept. of Electrical Engineering, Chang Gung University, Kwei-Shan, Taiwan
ABSTRACT “Thermal-microwave co-activation process” is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8” transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM. INTRODUCTION After more than three decades of researches in silicon based materials and device studies, silicon on insulator (SOI) substrate become a key materials for fabricating nano-scaling IC device. In 1994, M. Bruel [1] showed a single crystal structure silicon layer transfer technique to fabricate high quality SOI materials. This technique, so-called “Smart Cut Process”, includes three main steps: hydrogen ion implantation, low temperature wafer bonding, and the thermal treatment process. In Smart Cut process, silicon wafer is implanted with high dose hydrogen ions at least 5* 1016/cm2 as a device wafer and then this device wafer is subsequently bonded with a handle wafer using low temperature wafer bonding technique to form a bonded pair. After this bonded pair is heated at moderately high temperature of 400 to 600 degree centigrade, sub-micron silicon thin film is split from device wafer and then transferred onto the handle wafer.
The expansion of the hydrogen molecular evolving from the implanted hydrogen ions interacting with silicon dangling bonds resulted in exfoliation of the silicon thin film in the heating step. The hydrogen molecules inside the micro-cavities located near the ion projected range tend to expand and merge rather than to form individual blisters due to the Ostwald ripening processing during thermal treatment. Finally, the fracture failure of ion implanted area parallel to the bonded interface near the projected ion range is formed by the sideway expansion of the cavities due to the diffusion of implanted hydrogen excited by thermal energy. J. T. S. Lin [2] used a non-thermal method i.e. microwave irradiation at room temperature to
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