Linear growth of Ni 2 Si thin film on n+/p junction at low temperature
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Christophe Detavernier and R.L. Van Meirhaeghe Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium (Received 17 February 2006; accepted 27 July 2006)
Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a two-step low temperature rapid thermal process has been proposed, in which the as-deposited Ni will react with silicon during a low temperature (
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