Lithographic Materials Technologies: 193 nm Imaging and Beyond
- PDF / 892,280 Bytes
- 10 Pages / 417.6 x 639 pts Page_size
- 66 Downloads / 224 Views
ABSTRACT Advances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning < 0.1 pm design rule devices in future fabs. INTRODUCTION Advances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the microelectronics industry and are continuing to help push the ultimate limits of optical lithography. [1] The business is driven by the need to build semiconductor devices that contain an increasing number of individual circuit elements. Over time, device complexity and functionality have increased while minimum feature size has dramatically decreased. [2] The ability to shrink the feature size is critically dependent upon the technologies used in the delineation of the circuit pattern. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 rm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning
Data Loading...
