Materials Aspects of GaAs on Si
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MATERIALS ASPECTS OF GaAs ON Si SUMMARY ABSTRACT
Russ Fischer AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
Despite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1-51. At the GaAs/Si interface, a dislocation density of roughly 101 2 cm- 2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers. Antiphase disorder, where there is a non-uniform ordering of the GaAs sublattices, appears to be suppressed in growth on certain vicinal (100) orientations. At this stage of development, it does not appear that antiphase disorder is a technologically important issue. On the other hand, a fundamental understanding of antiphase disorder may lead to a better understanding of the initial stages of epitaxy. The primary technological issues for GaAs on Si are the thermal mismatch and reliability. It is unclear whether the presence of this strain will cause reliability problems.
REFERENCES
1. R. Fischer, N. Chand, W. Kopp, C. K. Peng, H. Morkoc, K. R. Gleason and D. Scheitlin, "A dc and Microwave Comparison of GaAs MESFETs Grown on GaAs and Si Substrates,"IEEE Trans. Electron Dev., vol. ED-33, pp. 206-213, 1986. 2. G. M. Metze, H. K. Choi and B.-Y. Tsaur, "Metal Semiconductor Field Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy," Appl. Phys. Lett., vol. 45, pp. 1107-1109, 1984.
Mat. Res. Soc. Symp. Proc. Vol. 91.
1987 Materials Research Society
142
3. S. L. Wright, M. Inada and H. Kroemer, "Polar on Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si (211) Surfaces," J. Vac. Sci. Technol., vol. 21, pp. 534-539, 1982. 4. R. Fischer, N. Chand, W. Kopp, H. Morkoc, L. P. Erickson and R. Youngman, "GaAs Bipolar Transistors Grown on (100) Si Substrates by Molecular Beam Epitaxy," Appl. Phys. Lett., vol. 47, pp. 397- 399, 1985. 5. N. Chand, R. People, F.A. Baiocchi, K.W. Wecht and A.Y. Cho, "Significant Improvement in Crystalline Quality of MBE Grown GaAs on Si (100) by Rapid Thermal Annealing," Appl. Phys. Lett., vol. 49, pp. 815-817, 1986.
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