Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin
- PDF / 364,886 Bytes
- 7 Pages / 432 x 648 pts Page_size
- 93 Downloads / 224 Views
Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films
Ze Jia1*, Jianlong Xu2, Xiao Wu1, Mingming Zhang2, Naiwen Zhang2, Jizhi Liu1, Zhiwei Liu1, Juin J. Liou3 1
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China 2
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, 100084, China 3
Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816, USA *
Corresponding author’s E-mail: [email protected]
ABSTRACT Different ferroelectric thin films and their related Metal-Semiconductor-Insulator-Metal (MSIM) structures include zinc oxide (ZnO) are studied, which can be utilized in back-gated ferroelectric field-effect transistors (FETs). The most ideal zinc oxide (ZnO) thin film prepared by sol-gel method are obtained under the pyrolysis temperature of 400°C and the annealing temperature of 600°C. The asymmetric or symmetric current-voltage characteristics of the heterostructures with ZnO are exhibited depending on different ferroelectric materials in them. The curves of drain current versus gate voltage for MSIM-structure FETs are investigated, in which obvious counterclockwise loops and a drain current switching ratio up to two orders of magnitude ate observed due to the modulation effect of remnant polarization on the channel resistance. The results also indicate the positive influences of impurity atom substitution in bismuth ferrite thin film for the MSIM-structure FETs. INTRODUCTION The back-gated FET is considered as one of the most promising candidates due to its advantages of processing easily for its simple structures, reducing the electrostatic coupling from drain to the channel, controlling threshold voltage dynamically and decreasing static leakage current [1,2]. Among various gate dielectric materials for back-gated FETs, ferroelectric materials have been widely utilized due to their high dielectric constant and their switchable remnant polarization [3,4]. The heterostructures consisting of ferroelectric and semiconductor become the critical part of the back-gated ferroelectric FETs [5-7]. ZnO as a natural n-type semiconductor is introduced as the channel layer because of its relatively high electrical conductivity, low crystallization temperature, good integration with different materials and low costs [8-10]. Among various ferroelectric materials, lead zirconate titanate (PZT) exhibits its medium remanent polarization and suitable crystallization temperature, but its intrinsic toxic lead can limit its further application [11-14]. A lead-free multiferroelectric material, bismuth ferrite
131
(BFO), has attracted more attentions for application due to its giant remanent polarization at room temperature (RT), high Curie temperature, high Neel temperature, and low crystallization temperature [15,16], though its leak
Data Loading...
