Modification of the Ratio between sp 2 - to sp 3 -Hybridized Carbon Components in PECVD Diamond-Like Films
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films P. A. Yunina,*, A. I. Okhapkina, M. N. Drozdova, S. A. Koroleva, E. A. Arkhipovaa, S. A. Kraeva, Yu. N. Drozdova, V. I. Shashkina†, and D. B. Radishevb a
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603087 Russia b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia *e-mail: [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—It is known that diamond-like carbon layers consist of carbon components with sp2 (graphite) and sp3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp2 and sp3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp2- and sp3-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp3 component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated. Keywords: diamond-like carbon, plasma-enhanced chemical-vapor deposition, single-crystal diamond, thermal annealing DOI: 10.1134/S1063782620090316
1. INTRODUCTION At present, diamond electronics is an actively developing field of semiconductor materials science [1]. In the last few years, a substantial breakthrough in the field of diamond microelectronics became evident, which is due to the appearance of single-crystal diamond substrates, whose quality is suitable for electronic applications [2, 3]. In addition, methods for controllably producing high-quality epitaxial p-type single-crystal diamond with specified profiles of boron impurity dopants, using chemical vapor deposition (CVD) [4, 5], were mastered. To create elements of the component base of diamond electronics, it is essential to work out the technologies of the deposition of dielectric coatings and conductive contact layers onto semiconducting diamond. From publications, it is known that the role of dielectric layers can be played by aluminum oxide [6], silicon nitride, zirconium oxide [7], and molybdenum oxide [8]. However, when used together with single-crystal diamond, this group of traditionally used insulators has some limitations associated with poor adhesion, imperfection of interfaces, etc. It has been proposed that, with † Deceased.
diamond-like carbon (DLC) films used as coatings on diamond, it is possible to solve the problems with adhesion and defects and contamination at the DLC/diamond interface [9]. In addition, in publications, it was demonstrated that an u
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