MRS Workshop Series Presents High-? Gate Dielectrics and Transparent Conducting Oxides
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MRS Workshop Series Presents High-κ Gate Dielectrics and Transparent Conducting Oxides The Materials Research Society has established the MRS Workshop Series, which deal with highly focused and compelling subjects, as do the MRS Fall and Spring Meeting symposia. However, Workshops differ significantly in that they ■ allow attendees to focus their full attention to a designated topic over a 2–3-day period; ■ offer much more interaction and discussion between speakers and the audience; ■ limit the size of the audiences to promote interaction; and ■ offer attendees a more in-depth review of important topics than is typically allowed in a “snapshot” symposium. The Workshop schedule consists of presentations by acknowledged experts, while also allowing for selected solicited talks and posters.
High-κ Gate Dielectrics The first Workshop presented this year is High-κ Gate Dielectrics, June 1–2, in New Orleans, LA. The Workshop Chair is Glen Wilk (Lucent Technologies) and the coorganizers are Veena Misra (North Carolina State University) and Eric Vogel (National Institute of Standards and Technology). The scaling of the gate oxide in complementary metal oxide semiconductor (CMOS) technology has rapidly accelerated over the past several years. This rate of scaling is manifested by the 1999 ITRS (International Technology Roadmap for Semiconductors) timeline, which now calls for an SiO2 gate oxide thickness less than 2.0 nm for sub-0.13 µm technology nodes. This extremely aggressive march toward ultrathin oxide layers has placed a very high priority on finding a high-κ replacement for SiO2 that will allow CMOS scaling to continue at this remarkable pace.
www. mrs. org/ meetings/ 48
This MRS workshop will span two days of invited presentations to create a focused meeting on the topic of high-κ gate dielectrics. It is intended to bring together leading researchers in this field for discussion on the critical issues which must be addressed and solved in order for high-κ materials to successfully replace SiO2. Along these lines, only minimal discussion will take place on issues related to ultrathin SiO 2. The critical issues will include interface stability, physical and electrical analysis, and CMOS process integration compatibility. To permit in-depth discussion, invited presentations will be 30–45 minutes, with appropriate time for questions. Two panel discussions will address the key roadblocks facing high-κ gate dielectrics. Representatives from major tool vendors will be present at the Workshop and in the panel discussions, as their input will be essential for understanding the requirements of process capability and tool development timelines. This Workshop will set the course for the integration of high-κ gate dielectrics into CMOS technology.
Transparent Conducting Oxides The second Workshop in the series is Transparent Conducting Oxides, to be held June 19–20, in Denver, CO. The coorganizers of the Workshop are David Ginley and Timothy Coutts of NREL and the co-organizers are Tom Mason (Northwestern University) and C
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