New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices
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New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices Mikhail Dronov1, Ivan Belogorohov2 and Dmitry Khokhlov3 1 A.M. Prokhorov General Physics Institute, Moscow, Russian Federation; 2 Federal State Research and Design Institute of Rare Metal Industry ("Giredmet"), Moscow, Russian Federation; 3 M.V. Lomonosov Moscow State University, Moscow, Russian Federation.
ABSTRACT We present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.
INTRODUCTION Resistive memory technologies currently receive much attention, being an advanced alternative to conventional memory devices. Organic materials are considered as a promising option for this sort of memory in view of a simple and low cost technology for their fabrication and an ability to produce flexible electronic devices. The resistive switching and the electrical memory effect in organic materials have been discovered in 1970s [1-2], but only recently, in the beginning of 2000s, have regained much attention [3-4]. Despite extensive experimental studies, no reliable theory explaining the switching effect was developed so far, nor any material or device with parameters attractive for a technology commercialization was presented [4]. We had chosen a MEH-PPV (Poly(1-methoxy-4-(2-ethylhexyloxy)-pphenylenevinylene)) as a base element for a composite material because it is one of the most well studied conductive conjugated polymers. It is a commonly used constituent of OLEDs and photovoltaic devices. This material possesses well known and reproducible electrical properties. The idea to add metal particles into the functional material comes from the results of the paper [5] in which it was demonstrated that introduction of metal nanoparticles or a metal layer plays an important role in observation of conductivity switching in the composite material. In our approach, a simple non-vacuum technology was used for formation of memory devices. Besides electrical switching, a possibility of light induced switching of conductivity was studied.
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EXPERIMENT DETAILS Device preparation The main idea of our approach was to prepare samples using a simplest possible technology. Two types of samples were prepared. The first type was dip coated on an insulating substrate with already deposited contacts (fig.1a). The second type was prepared as bulk samples by casting into a form. In this case, two different contact configurations were used: the coplanar (fig.1b) and the sandwiched one (fig.1c). The distance between contacts varied in the range 100 m - 1mm, and the thickness of the samples was in the range 30 - 200 m. The contacts were made with silver paste. The composite materials were prepared
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