On the Interface Structure of Buried CoSi 2 /Si(001) Layers and Their Respective Schottky Barrier Heights
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ABSTRACT This paper describes a high-resolution transmission electron microscope (HRTEM) study of the morphology and the atomic structure of CoSi2/Si(001) interfaces of continuous buried sulicide layers. These layers were produced by high-dose Co+ ion implantation and subsequent rapid thermal annealing. Planar interface regions of high perfection with domains of different atomic interface structure, and interface steps, frequently with I 111)I facets, were observed. There were significant differences in the interface structure between the upper and lower interfaces. Measuring Schottky barrier heights (SBH's) revealed different values for the upper (0.67eV) and lower (0.78eV) CoSi2/n-Si(001I) interfaces. Possible correlations between the atomic interface structures and the resulting electronic properties are discussed. INTRODUCTION High-dose implantation of Co-+' ions at medium energies and temperatures into Si wafers followed by annealing processes allows the production of continuous buried CoSi2 layers [see e.g. 1-4]. Owing to the favourable properties of such metallic silicide layers (epitaxial growth, stability at high temperatures, electrical resistivity
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