One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications
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1228-KK12-07
One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications N. Gogneau1, L. Le Gratiet1, R. Hostein1, B. Fain1, L. Largeau, G. Patriarche1, G. Beaudoin1, D. Elvira1, ,A. Beveratos1, I. Robert-Philip1, I. Sagnes1 1
Laboratoire de Photonique et de Nanostructures, LPN-CNRS / UPR20, Route de Nozay, 91460 Marcoussis, France ABSTRACT
We demonstrate the feasibility of a new approach of Nano Selective Area Growth (NanoSAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nanoopenings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length. INTRODUCTION The development of high quality single photon sources emitting at 1.55 µm is a crucial technological achievement for long distance quantum communications. Although single photon emission has been demonstrated [1,2] with self-assembled (InGa)As/GaAs quantum dots, neither the emission wavelength or the site-control was not compatible with large scale production in the telecommunication wavelength. Realizing efficient sources requires a precise spatial and spectral matching of the quantum dots emission and position with a microcavity. Approaches based on standing or inverted-pyramid or self-constructed nanoplanes [3-5] have demonstrated QD localization and single photon emission. But only the recently proposed scheme [6, 7] based on self-assembled quantum dots have demonstrated the controlled integration of QDs with optical cavities. Although, these approaches are very interesting for fundamental studies, they are unsuitable for large-scale production and the integration of more than one quantum dot. In this work, we propose a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize, at the nanometer scale (around 10 nm), InAs/InP QDs with high structural properties grown by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings and on the two main advantages of MOVPE : the important diffusion length of the actives species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.
EXPERIMENT Samples were grown on (100)InP substrates patterned with a dielectric mask. The mask patterns were formed using a 100 keV LEICA electron-beam writer with 5 nm resolution. After a standard acid cleaning, the patterned samples were
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