Optical and electrical properties of E-Beam deposited TiO 2 /Si thin films
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Optical and electrical properties of E-Beam deposited TiO2/Si thin films Saleh Abubakar1,2 · Ercan Yilmaz1,2 Received: 10 January 2018 / Accepted: 2 April 2018 © Springer Science+Business Media, LLC, part of Springer Nature 2018
Abstract In this paper, optical and electrical properties of E-Beam deposited T iO2/Si thin films have been studied and investigated extensively. The films were deposited on p-type (100) silicon wafer by using electron beam evaporation technique. The thickness of the thin films was measured by a spectroscopic reflectometer, which is about 216 nm. The fabricated titanium oxide (TiO2) thin films were annealed at 800 °C for 1 h under N 2 ambient. X-ray diffraction measurements were performed to study the structure and phase identification of the fabricated T iO2 thin films. For the optical properties, reflection, transmittance, refractive index and absorption coefficient were obtained and analyzed. The photocurrent and dark current of the fabricated films were measured by I–V measurements. The measurement of the current–voltage (I–V) characteristics possesses good ohmic contact. The electrical characterizations of the films were performed in the range of the low frequencies (50 and 100 kHz) and high frequencies (750 kHz and 1 MHz) by the capacitance–voltage and conductance–voltage measurements at room temperature. The capacitance of the fabricated TiO2 MOS capacitor at both high and low frequencies increases with the decrease in frequencies. The obtained conductance curves (peaks) increase with the decreasing in the frequencies. This can be due to the interface state density, series resistance and interfacial dielectric of the fabricated MOS capacitors. The variation in the characteristics of the fabricated film shows that T iO2 is a promising candidate to be used in the optoelectronic and future UV detector applications as a switch, such as an optical amplifier, emitter, and UV light detectors.
1 Introduction For many years, scientists have been working on how to replace the conventional S iO2 layer with the high dielectric constant thin films, having higher tunnelling current [1–4]. High-k thin films have considered being the replacement of the conventional silicon dioxide (SiO2) layer, due to their exceptional electronics features such as high refractive index, large band gap, low absorption, and optical transparency. Transparent oxide semiconducting material such as titanium oxide (TiO2) is broadly used as a mobile layer of semiconductor devices [5, 6]. Titanium dioxide (TiO2) thin films have a wide practical application, due to their distinctive optical, structural and electrical properties. The study of the optical and electrical properties of E-Beam deposited titanium oxide–silicon thin films has * Saleh Abubakar [email protected] 1
Center for Nuclear Radiation Detectors Research and Applications, AIBU, 14280 Bolu, Turkey
Physics Department, Abant Izzet Baysal University, 14280 Bolu, Turkey
2
gained a considerable attention because these films can
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