Oxygen manipulation at the Co/SiO 2 interface and its effect on spin-dependent transport properties
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Oxygen manipulation at the Co/SiO2 interface and its effect on spin‑dependent transport properties Qian Liu1 · Yaqiang Tian1 · Xiaoping Zheng1 · Liansheng Chen1 · Yuqing Zhao2 · Shaolong Jiang3 Received: 3 March 2020 / Accepted: 29 May 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Oxygen manipulation at ferromagnetic metal (FM)/oxide heterointerfaces has been proved to be significantly effective in tailoring magnetic and transport properties. Herein, oxygen migration at the Co/SiO2 interface with the aid of post-annealing treatment induces an enhancement of the anomalous Hall effect (AHE) for Pt/[Co/Pt]2/Co/SiO2/Pt multilayers, which is identified by X-ray photoelectron spectroscopy. Nevertheless, there is not oxygen migration phenomenon at the SiO2/Co interface and the AHE is weakened due to Co–Pt interdiffusion during the annealing process for Pt/SiO2/Co/[Pt/Co]2/Pt multilayers. This work may pave the way toward the application of FM/oxide heterointerfaces in spintronic devices. Keywords Anomalous Hall effect · The Co/SiO2 interface · Oxygen manipulation
1 Introduction Ferromagnetic metal (FM)/oxide heterointerfaces are attractive building blocks to construct magnetic sensors, memories, and logic devices with unconventional functionalities owing to their unique properties [1–7]. Notably, oxygen migration at FM/oxide heterointerfaces has recently stirred up research interest on account of its powerful ability to significantly regulate magnetic and transport properties [8–14]. Accordingly, manipulating oxygen behavior will advance the applications of FM/oxide heterostructures to spintronic Electronic supplementary material The online version of this article (https://doi.org/10.1007/s00339-020-03680-6) contains supplementary material, which is available to authorized users. * Qian Liu [email protected] * Yuqing Zhao [email protected] * Shaolong Jiang jiangsl‑[email protected] 1
College of Metallurgy and Energy, North China University of Science and Technology, Tangshan 063210, China
2
School of Physics, Hunan University of Science and Technology, Xiangtan 411201, China
3
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
devices. Thus, extensive efforts have been made to tune magnetic and transport properties by manipulating oxygen transport [8, 15, 16]. For example, Beach et al. have reported that electrical switching of the interfacial oxidation state allows for controlling interfacial magnetism in Co/GdOx [8]. Yu et al. have showed that anomalous Hall effect (AHE) can be controlled via redox-driven oxygen migration using annealing in [Pt/Fe]3/MgO [15]. Additionally, FM/SiO2 heterointerfaces have recently gained tremendous attention. For instance, Zeng et al. have reported giant antidamping orbital torque in Pt/Co/SiO2/Pt heterostructures due to the orbital Rashba–Edelstein effect [17]. However, whether or not oxygen migration exists at the FM/SiO2 heterointerfaces is still ambiguous so far. To the bes
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