Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00268-y
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Parameter Extraction Using the Output Characteristics of Thin‑Film Transistors in Weak‑Conduction and Triode‑Region Carlos Avila‑Avendano1 · Adelmo Ortiz‑Conde2 · Jesus A. Caraveo‑Frescas1 · Manuel A. Quevedo‑Lopez1 Received: 29 May 2020 / Revised: 6 October 2020 / Accepted: 9 November 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods. Keywords MOSFET · Thin-film transistors (TFTs) · Parameter extraction · Weak-inversion output characteristic · Trioderegion · Contact ideality factor
1 Introduction The imperative need of using energy-autonomous devices and increasing the battery life in mobile devices has motivated researchers to develop ultra-low voltage operation circuits [1–3]. Therefore, the interest in more accurate models of the weak conduction of MOSFETs is rapidly growing. The weak-conduction triode-region current of single crystal MOSFETS was first studied in 1975 [4–6] and a detailed methodology of CMOS circuit design in weak conduction was published in 2014 [1]. Although single crystal silicon sets the benchmark for device performance, thin-film technologies offer large area and low-cost capabilities with low to moderate performance. Besides, the increasing demand of wearable electronics also promotes the development of ultra-low power thin-film devices, thanks to their inherent compatibility with flexible substrates. The weak-conduction triode-region current of singlecrystal MOSFET presents two exponential dependences [4, 5], as discussed in Sect. 2. The first dependency is a function of the gate bias, exp((VG − V Tw)/(n vth)), while the * Adelmo Ortiz‑Conde [email protected]; [email protected] 1
Materials Science and Engineering Department, University of Texas at Dallas, Richardson, TX 75080, USA
Solid State Electronics Laboratory, Universidad Simón Bolívar, Caracas 1080, Venezuela
2
second one is a function of the drain bias (1− exp(VD/(nD vth)). It is observed that the exponential coefficients n and nD are different for single-crystal MOSFET and some authors approximate nD ≅ 1 [1–3, 6–8]. However, the exponential coefficients nD, which has been denominated as contact ideality factor [9, 10], for indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs), has been reported in a wide range of values that goes from 1.7 [9] up to 12 [10]. On the other hand, for polycrystalline silicon (poly-Si) TFTs, an approximation of nD ≅ n has been traditionally used [11]. In this article, we present a method to ext
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