Peak shape analysis of deep level transient spectra: An alternative to the Arrhenius plot
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Peak shape analysis of deep level transient spectra: An alternative to the Arrhenius plot Patrick G. Whiting1,a), Kevin S. Jones1, Karl D. Hirschman2, Jayantha Senawiratne3, Johannes Moll3, Robert G. Manley3, J. Gregory Couillard3, Carlo A. Kosik Williams3 1
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA Department of Electrical Engineering, Rochester Institute of Technology, Henrietta, New York 14623, USA 3 Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York 14870, USA a) Address all correspondence to this author. e-mail: [email protected] 2
Received: 18 October 2018; accepted: 8 February 2019
A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the width and normalized intensity of a DLTS signal to determine the activation energy and capture cross section of the trap that generated the signal via a variable, kO. This constant relates the carrier emission rates giving rise to the differential capacitance signal associated with a given trap at two different temperatures: the temperature at which the maximum differential capacitance is detected, and an arbitrary temperature at which some nonzero differential capacitance signal is detected. The extracted activation energy of the detected trap center is used along with the position of the peak maximum to extract the capture cross section of the trap center.
Introduction Deep level transient spectroscopy (DLTS) is a very sensitive method used to measure electrically active deep level traps in semiconductors. DLTS began as a differential capacitive technique developed by Lang in 1974 [1] and has since extended to a variety of other differential charge sensing methods, including charge transient spectroscopy (QTS) [2], constant capacitance deep level transient spectroscopy (CCDLTS) [3], current transient spectroscopy (I-DLTS) [4], and photo-induced current transient spectroscopy (PICTS) [5]. These various sensing methods may be applied to a large variety of devices including Schottky diodes [6], PN junction diodes [7], MOS capacitors [8], MOS transistors [9], bipolar junction transistors [10], and high electron mobility transistors [11], etc. The methodology common to these various techniques is the observation of charge decay, due to thermal emission from trap centers, in a semiconductor at cryogenic temperatures. While there are other methods to stimulate emission from trap centers, such as the use of monochromatic illumination [12], DLTS, has remained a popular technique in the literature since its inception. A DLTS signal is generated by monitoring the change in the decaying capacitance normalized to its equilibrium value
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(DC/CO) measured at two separate moments in time. The timevariable electrostatic potential generating this capacitance change can be sinusoidal, as in the case of a lock-in technique, or a square wave of variable duty cyc
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