Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthes
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Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis V. P. Ponomarenkoa, b, *, V. S. Popova, S. V. Popovc, and E. L. Chepurnova a
Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, Moscow, 111538 Russia b Moscow Institute of Physics and Technology, Dolgoprudny, Moscow oblast, 141701 Russia cShvabe JSC, Moscow, 129366 Russia *e-mail: [email protected] Received January 30, 2019; revised February 7, 2019; accepted February 10, 2019
Abstract—We review the synthesis methods, crystal parameters, and band structure of two-dimensional and quasi-two-dimensional materials, including graphene; group IV‒VIII transition metal dichalcogenides; VI III VI III VI II VI 2D binary chalcogenides A IV BVI , A IV of group IV, III, and II transition m Bn , A B , A m Bn , and A B metals; Ti, Zr, Hf, Bi, and Sb trichalcogenides; A V BV (AsN, AsP, PN, SbAs, SbN, SbP) 2D materials; A IIIN (A = Al, Ga, In, B) 2D nitrides; monoatomic 2D materials (phosphorene P, plumbene Pb, stanene Sn, germanene Ge, silicene Si, antimonene Sb, arsenene As, bismuthene Bi, borophene B, and octo-nitrogene 8-N); functionalized graphene and silicon carbide SiC; CO, GeO, and SnO 2D oxides; 2D transitional metal dioxides, Ge, and Sn; 2D trioxides MoO3 and WO3; and transition metal di- and trihalides. Keywords: two-dimensional (2D) crystals, graphene, dichalcogenides, chemical vapor deposition (CVD), plasma enhanced CVD synthesis DOI: 10.1134/S1064226920090090
1. INTRODUCTION The discovery of a method for transforming threedimensional (3D) graphite into two-dimensional (2D) graphene crystals of only one atomic layer with extraordinary electrical, mechanical, thermal, and optical properties in 2004 [1‒4] evoked a tremendous increase in the number of studies on designing various graphene-based electronic devices. Simultaneously, the explosion of interest in creating other 2D materials was observed. To date, there has been some success in synthesizing monoatomic 2D crystals based on group IV elements of the periodic table, including germanene (Ge), silicene (Si), borophene (B), stanene (Sn), and phosphorene (P), using different techniques. In some studies, the possibility of obtaining 2D crystals based on carbides, oxides, chlorides, nitrides, transition metal mono- and dichalcogenides, etc., was analyzed or already experimentally demonstrated (see, for example, [5]). Last decade some of these materials were used to develop and fabricate prototypes of nanoelectronic devices, such as graphene field-effect transistors (GFETs) and phototransistors, ultrafast electromagnetic radiation detectors, biosensors, energy storage devices, and solar cells. Many of these devices open up prospects for the production of fundamentally new generations of electronic and photosensor devices with unique
properties. These are terahertz transistors and photodetectors; ultrafast nanodetectors of the visible, ultraviolet, and infrared spectral ranges, including those formed on flexible substrates
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