Photoluminescence and Raman Spectroscopy Studies of H + Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing
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Photoluminescence and Raman Spectroscopy Studies of H+ Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing Vladimir P. Popov, Ida E. Tyschenko, Konstantin S. Zhuravlev, Ivan I. Morosov1 Institute of Semiconductor Physics, Novosibirsk, 630090, Russia, 1 Institute of Nuclear Physics, Novosibirsk, 630090, Russia,
ABSTRACT H+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heattreated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.
INTRODUCTION
Recently, there has been an ever-increasing interest in the formation of nanocrystalline materials. Various methods of creating luminescent nanocrystalline materials have been reported [1-5]. An application area for nanocrystalline Si has been also rapidly growing. In particular, it is possible its using in the fabrication of Si based optoelectronics devices. Moreover, thin films containing a high density of the homogeneously oriented nanocrystals may be used as a “soft target” for the growth of the non-strained layers with different structure and the formation of Si based hetero-structures. In this paper, we report a series of experiments to study a behaviour of H+ ion implanted SOI structures prepared by hydrogen ion slicing during heat treatments.
EXPERIMENT
SOI structures were formed by hydrogen slicing HS method. A thicknesses of the top silicon layer and buried SiO2 were 500 nm and 280 nm, respectively. HS SOI structures have been implanted with H+ ions at an energy of 24 keV to doses of 3.0 × 1017 cm-2. Ion plasma source was used for implantation. The profiles of H atoms were controlled by SIMS. After implantation the samples were heat-treated by either FA or RTA annealing. The FA anneals was performed within the temperature range of 200 to 700oC in an N2 ambient for 1 hour while the RTA anneals G3.2.1
were carried out at temperatures ranging from 300 to 900oC in air for 10 s. Raman and PL measurements were used to investigate the structural and optical properties of the structures prepared. Both unimplanted and H+ ion implanted HS SOI structures were investigated. PL spectra were excitated by N2 laser wavelength of 337 nm at room temperature and were recorded within the emission wavelength range of 340 – 850 nm. Raman spectra were measured in backscattering geometry with a DFS-52 spectrometer. The excitation wavelength was the 488nm line o
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