Fabrication and photoresponse characteristics of high rectification photodetector based on methyl violet nanoparticles-P
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Fabrication and photoresponse characteristics of high rectification photodetector based on methyl violet nanoparticles‑PVA/p‑si heterojunction for optoelectronic applications Ahmed M. El‑Mahalawy1 · Mohamed Abd‑El Salam1 Received: 14 March 2020 / Accepted: 27 April 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In this perspective research, methyl violet 6B, a nanocrystalline dye, is exploited as an impregnating material for improving the absorption and photoconductivity characteristics of polyvinyl alcohol, PVA. The PVA-MV composite thin film’s structure and morphology revealed a uniform smooth surface with 9.7 nm root mean square roughness. The optical absorption of PVA thin film is enhanced after the dye incorporation and exhibited an energy gap modification from 4.36 to 1.75 eV. Moreover, we fabricated an Ag/PVA-MV/p-Si/Al MIS Schottky diode and investigated its electrical characteristics in dark. The heterojunction’s microelectronic parameters such as ideality factor, reverse saturation current, barrier height, rectification ratio are estimated and found to be 2.5, 6.4 nA, 0.78 eV, and 8795.2 at 3 V, respectively. A significant quasi-saturated reverse photocurrent with obvious sensitivity for light intensity variations is detected. The fabricated photodetector exhibited responsivity, specific detectivity, and signal-to-noise ratio ~ 2.622 mA/W, 6.46 × 109 Jones, and 407.9, respectively. Keywords PVA-MV nanocomposite · MIS photodiode · Rectification ratio · Detectivity · Conduction mechanism
1 Introduction Recently, metal/inorganic semiconductor (MS) contacts symbolized the main part of a wide range of microelectronic and optoelectronic devices industries including photodiodes, solar cells, transistors, radio-frequency detectors, and gas sensors [1–3]. However, the metal/inorganic semiconductor contact-based devices achieved high stability of performance and long durability, a new pathway was paved toward replacing the inorganics with organic semiconductor-based microelectronic devices. The organic semiconductors especially conducting polymers have many advantages rather than their counterparts including the high flexibility, high absorption coefficient, low cost, scalability to large-area production, and the simplicity of fabrication [4–6]. Several researches were performed for exploiting the beneficial properties of both organics and inorganics in microelectronic and optoelectronic applications. The metal/insulator/semiconductor * Ahmed M. El‑Mahalawy [email protected] 1
Thin Films Laboratory, Physics Department, Faculty of Science, Suez Canal University, Ismailia 41522, Egypt
(MIS) devices achieved a good performance in many applications; both organics (i.e., polymers and oligomers) and inorganics (i.e., SiO2, Ba0.25Sr0.75TiO3) were utilized as insulating interlayers. Commonly, the integration between organics and inorganics was achieved by utilizing an organic interlayer at the metal/inorganic semiconductor interface giving rise to metal/ organic insulator/i
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