Photoresponse properties of coronene nanowires thin-film-based photodiode
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Photoresponse properties of coronene nanowires thinfilm-based photodiode Mehmet Okan Erdal1,* 1
Meram Vocational School, Necmettin Erbakan University, 42090 Konya, Turkey
Received: 6 August 2020
ABSTRACT
Accepted: 4 September 2020
The Al/CRNNW/n-Si device with a coronene nanowire (CRNNW) interlayer was fabricated by a physical vapor deposition technique and characterized under dark various illumination intensities via I–V measurements at room temperature. The device has exhibited rectifying behavior and the rectifying ratio values decreased from 1.16 9 103 to 1.44 at 4 V biases by increasing light intensity from 20 to 100 mW. The Al/CRNNW/n-Si device was characterized by various techniques such as thermionic emission theory, Norde, and Cheung technique, and device parameters were obtained. The ideality factor and barrier height values were determined as 21.33 and 0.75 eV, respectively, under dark condition from the thermionic emission theory. The series resistance of the device is obtained as 3090 X from the Norde method and 9840 X from the Cheung method for the dark condition. The current transport mechanism of the device was discussed in detail for various regions from lnI–lnV plot. The coronene layer can be thought of and improved as interfacial material for metal– semiconductor devices.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Coronene is a kind of organic semiconductor material and has six benzene rings in its structure [1]. Coronene can be used for organic electronics owing to have suitable transport mechanism and light-emitting capabilities [2, 3]. For these reasons, coronene material can be employed as an interfacial layer between the metal and semiconductor to obtain optoelectronic devices such as photodiodes and lightemitting diodes. Metal semiconductor contacts have drawn considerable interest for a half of the century due to their
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https://doi.org/10.1007/s10854-020-04434-z
importance in the semiconductor technology [4, 5]. Sometimes interfacial layers such as insulator, semiconductor polymer, or metal oxide are inserted between the metal and semiconductor to control the current transport mechanism of the contacts [6, 7]. Among these interfacial layers, organic semiconductors are very popular, depending on their adjustable conductivity and environmentally friendly structure [8, 9]. The coronene also can be used as an interfacial control layer between the metal and semiconductor. Pakma et al. [10] used coronene as an interfacial layer for Al metal and n-Si semiconductor device. The coronene layer was obtained by spin
J Mater Sci: Mater Electron
coating technique. The device was characterized by I– V measurements under dark and various illumination conditions at room temperature. They concluded that the coronene can be used for optoelectronic and solar cell applications. Xiao et al. [11] prepared coronene nanowires by the reprecipitation method and characterized them by various instruments. Th
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