Piezoresistance Gauge Factors in Heavily Boron-Doped Polysilicon from Infrared Piezoreflectance

  • PDF / 391,245 Bytes
  • 6 Pages / 414.72 x 648 pts Page_size
  • 5 Downloads / 151 Views

DOWNLOAD

REPORT

PIEZORESISTANCE GAUGE FACTORS IN HEAVILY BORON-DOPED POLYSILICON FROM INFRARED PIEZOREFLECTANCE J. CALI*, E. BUSTARRET*, P. KLEIMANN**, M. LE BERRE**, D. BARBIER** *LEPES-CNRS, 25 av. des Martyrs, BP 166, F-38042 Grenoble Cedex 9, France. **LPM-INSA, 20 av. Albert Einstein, 69621 Villeurbanne Cedex ABSTRACT Heavily boron-doped (4x1O' 9 < [B]

Data Loading...

Recommend Documents
Infrared photoconductivity in heavily nitrogen doped a-Si:H

163 17 186KB

Structural and Electrical Properties of Heavily-Doped Rapid-thermal-Processed Polysilicon Emitters and Contacts on Silic

179 87 833KB

Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl 2 Molecular Beam

166 20 1006KB

Strain gauge

180 80 83KB

The Direct Measurement of Ionic Piezoresistance

164 63 632KB

Gauge Fields

163 65 13MB

Strain Gauge

162 13 47MB

Scattering Amplitudes in Gauge Theories

118 90 2MB

Chiral gauge theory and gravity from unconventional supersymmetry

141 62 434KB

A scalar potential from gauge condensation and its implications

161 75 512KB

Defect Luminescence in Heavily Mg Doped GaN

210 24 346KB

Abelian Gauge Theories: QED

173 46 3MB