Pin Printing of Xerogels Allows Rapid Formation of Chemical-Sensor Arrays
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biasing tends to be overwhelming for device practicality. In an article published in the March 18 issue of Applied Physics Letters, Lee and Steckl proposed lateral color integration (different dopant species found on side-by-side regions of a single layer). They have found with their technique that fine-tuning within the visual spectrum is not only possible, but also improves the emission intensity. The researchers grew GaN films on Si(111) substrates by means of molecularbeam epitaxy (MBE), doping with Er and Eu in situ. Indium tin oxide (ITO) electrodes were deposited after GaN growth, for electroluminescence (EL) characterization. ELDs were fabricated by two methods: by a shadow mask at 400°C and by photoresist (PR) lift-off at temperatures of
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