Power Amplifier Reliability
This chapter talks about power amplifier reliability subjected to voltage stress and thermal effect. Both class AB and class E power amplfiiers are discussed. In addition, the class E power amplifier is fabricated using 0.18 micron CMOS process and experi
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Jiann-Shiun Yuan
CMOS RF Circuit Design for Reliability and Variability 123
SpringerBriefs in Applied Sciences and Technology Reliability
Series editors Cher Ming Tan, Singapore, Singapore Xuejun Fan, Beaumont, TX, USA
More information about this series at http://www.springer.com/series/11543
Jiann-Shiun Yuan
CMOS RF Circuit Design for Reliability and Variability
123
Jiann-Shiun Yuan Department of Electrical and Computer Engineering University of Central Florida Orlando, FL USA
ISSN 2191-530X SpringerBriefs in Applied Sciences ISSN 2196-1123 SpringerBriefs in Reliability ISBN 978-981-10-0882-5 DOI 10.1007/978-981-10-0884-9
ISSN 2191-5318 and Technology ISSN 2196-1131
(electronic) (electronic)
ISBN 978-981-10-0884-9
(eBook)
Library of Congress Control Number: 2016938045 © The Author(s) 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer Science+Business Media Singapore Pte Ltd.
Contents
1
Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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CMOS Transistor Reliability and Variability Mechanisms . 2.1 Hot Electron Effect . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2 Gate Oxide Breakdown. . . . . . . . . . . . . . . . . . . . . . . . 2.3 Negative Bias Temperature Instability. . . . . . . . . . . . . . 2.4 Process Variability . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Low-Noise Amplifier Reliability . . . . . . . . . 3.1 Analytical Equations . . . . . . . . . . . . . . 3.2 LNA Fabrication and Experimental Data. References . . . . . . . . . . . . . . . . . . . . . . . . .
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Power Amplifier Reliab
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