Power GaN Devices Materials, Applications and Reliability
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an ex
- PDF / 26,416,532 Bytes
- 383 Pages / 453.543 x 683.15 pts Page_size
- 140 Downloads / 996 Views
Matteo Meneghini Gaudenzio Meneghesso Enrico Zanoni Editors
Power GaN Devices Materials, Applications and Reliability
Power Electronics and Power Systems Series editors Joe H. Chow, Rensselaer Polytechnic Institute, Troy, New York, USA Alex M. Stankovic, Tufts University, Medford, Massachusetts, USA David Hill, The University of Hong Kong, Sydney, New South Wales, Australia
More information about this series at http://www.springer.com/series/6403
Matteo Meneghini Gaudenzio Meneghesso Enrico Zanoni •
Editors
Power GaN Devices Materials, Applications and Reliability
123
Editors Matteo Meneghini Department of Information Engineering University of Padova Padua Italy
Enrico Zanoni Department of Information Engineering University of Padova Padua Italy
Gaudenzio Meneghesso Department of Information Engineering University of Padova Padua Italy
ISSN 2196-3185 ISSN 2196-3193 (electronic) Power Electronics and Power Systems ISBN 978-3-319-43197-0 ISBN 978-3-319-43199-4 (eBook) DOI 10.1007/978-3-319-43199-4 Library of Congress Control Number: 2016947213 © Springer International Publishing Switzerland 2017 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer International Publishing AG Switzerland
Preface
Over the last few years, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. The high critical field (3.3 MV/cm) allows to fabricate transistors with breakdown voltage higher than 1 kV; further advantages originate from the high mobility of the 2-dimensional electron gas (2DEG), that allows to reach very low on-resistance values ( 0.7 Γ-Γ > 1.1 Γ-K > 2.7
Direct 0.65
0.296 3.8E−6/a 2.9E−6/c
1100
3.544/a, 5.718/c
6.81 128.83 3.18E+22
Wurtzite
GaN
Γ-Γ′1.9 Γ-M 2.1
Direct 3.39(H)
2.1
Hex 3.189/a, 5.185/c, cubic 4.52 2573, @60 kbar 0.431 5.6E−6/a 3.2E−6/c
Hexagonal, cubic 6.1 83.73 4.37E+22
SiC
Indirect
