Preparation and Characterization of Tin-doped Indium (ITO) Film by Photo Reaction of Nano-Particle (PRNP) Using Excimer
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1113-F06-20
Preparation and Characterization of Tin-doped Indium (ITO) Film by Photo Reaction of Nano-Particle (PRNP) Using Excimer Laser
T. Tsuchiya, F. Yamaguchi, I. Morimoto, T. Nakajima, and T. Kumagai National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 5, 1-1-1 Higashi Tsukuba, Ibaraki 305-8565, Japan Asahi Kasei Corporation, Central R&D Laboratories, 2-1, Samejima, Fuji-city, Shizuoka 416-8501, Japan
ABSTRACT An ITO film on an SiO2 substrate was prepared from spin-coated nano–particles using a simple thermal process and photo irradiation process. The effects of the excimer lamp and excimer laser on the resistivity of the film were investigated. When the film is 40 nm thick, the combined two-step irradiation by an excimer lamp and laser in N2 is effective for the preparation of the ITO film with a lower resistivity. Using the two-step irradiation and one-step KrF irradiation in N2 at room temperature, the resistivity of the ITO film was 5.94×10-4 Ωcm. On the other hand, when using the thermal process, the resistivity of the film sintered at 500 °C in N2 was 4.10×10-3 Ωcm. The differences in resistivity are discussed on the basis of the microstructure using SEM, XRD and Hall measurements.
INTRODUCTION The tin doped indium (ITO) thin film is widely used for optical and electronic applications, such as touch panel contacts, electrodes for LCD and electro-chromic displays, and energy conserving architectural windows because of its good electrical and optical properties. The ITO film, which has a high conductivity (2×10-4 Ωcm), for industry is now produced by physical vapor deposition, such as sputtering. The chemical solution process is a good candidate method for the preparation of the ITO film because of its simplicity and low facility investment. Ota and coworkers reported that the high conductivity (2.5×10-4 Ωcm) ITO film could be prepared using the metal organic deposition (MOD) at 600 °C in a N2–0.1% H2 atmosphere [1]. However, this high temperature heat treatment is considered to be unfavorable when the film is produced on a polymer substrate as in the case of electronics devices. In a previous study, we developed the excimer laser-assisted metal organic deposition (ELAMOD) process for the preparation of ITO films at low temperature [2, 3]. Recently, another problem that indium resource will be scarce in the next generation has become recognized more and more. Therefore, to decrease the actual use of the indium in the thin film process, the direct writing of the ITO electrode using an ink-jet process would be useful instead of the photo lithography process. So far, ITO nano-particles have been synthesized by many methods [4-11]. However, the resistivity of the ITO film prepared by a simple heating method was 8×10-3 Ωcm [6]. Therefore, to improve the electrical resistivity, we investigated the
preparation of an ITO film by the simple thermal reaction and photo reaction process of nano-particles, and characterized the electrical and transparent properties of the film.
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