• PDF / 188,668 Bytes
• 6 Pages / 612 x 792 pts (letter) Page_size
• 8 Downloads / 169 Views

DOWNLOAD

REPORT

Properties of Sputtered Bilayer WNx/W Diffusion Barriers between Si and Cu K. D. Leedy, M. J. O'Keefe1, E. J. Dahlgren1 and J. T. Grant2 Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433 1 University of Missouri-Rolla, Dept. of Metallurgical Engineering, Rolla, MO 65401 2 Research Institute, University of Dayton, Dayton, OH 45469 ABSTRACT Copper interconnect metallizations in next generation integrated circuits will require thin diffusion barrier layers (

Recommend Documents

Reliability of Tantalum Based Diffusion Barriers between Cu and Si

183 94 859KB

Ibad Diffusion Barriers Between YBaCuO and Si

175 64 229KB

Amorphous W-Zr Films as Diffusion Barriers Between Al and Si

149 76 851KB

The Relation Between Microstructure and Electronic Properties of Magnetron Sputtered a-Si 1-x ,C x :H

141 67 339KB

Diffusion barriers for CeFe 4 Sb 12 /Cu thermoelectric devices

356 108 246KB

Adhesion and Cu Diffusion Barrier Properties of a MnO x Barrier Layer Formed with Thermal MOCVD

213 39 245KB

Microstructural Evolution of Cu/Solder/Cu Pillar-Type Structures with Different Diffusion Barriers

169 104 4MB

Ultra Thin Sacrificial Diffusion Barriers - Control of Diffusion Across the Cu-SiO 2 Interface

169 33 210KB

Modification of Magnetron Sputtered A-Si 1 - X c x :H Films by Implantation of sn +

212 106 475KB

Mechanical properties and size effect in nanometric W/Cu multilayers

187 103 131KB

Intermetallic phase formation and breakdown of Mo diffusion barriers in Ni-Mo-Cu layers

161 67 2MB

Characterization of PECVD Wn x for Copper Barrier Application

176 53 2MB