Prospects of direct growth boron nitride films as substrates for graphene electronics
- PDF / 740,173 Bytes
- 13 Pages / 584.957 x 782.986 pts Page_size
- 41 Downloads / 192 Views
Matthew J. Hollander Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802; and Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
Maxwell Wetherington Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802; and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
Ke Wang Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Takahira Miyagi Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Gregory Pastir Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802
David W. Snyder Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802; and Department of Chemical Engineering; The Pennsylvania State University, University Park, Pennsylvania 16802
Jamie J. Gengler Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433; and Spectral Energies, LLC, Dayton, Ohio 45431
Andrey A. Voevodin and William C. Mitchel Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433
Joshua A. Robinsona) Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (Received 7 August 2013; accepted 9 October 2013)
We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a .25x reduction in the root-mean-square surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si (111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, chemical vapor deposition (CVD) graphene transferred to direct-grown boron nitride films on Al2O3 at 400 °C results in a .1.5x and .2.5x improvement in mobility compared to CVD graphene transferred to Al2O3 and SiO2 substrates, respectively, which is attributed to the combined reduction of remote charged impurity scattering and surface roughness scattering. Simulation of mobility versus carrier concentration confirms the importance of limiting the introduction of charged impurities in the h-BN film and highlights the importance of these results in producing optimized h-BN substrates for high performance graphene and TMD devices. a)
Address all correspondence to this author. e-mail: [email protected] This author was an e
Data Loading...
