Amorphous Silicon Image Sensor : Characteristics of an ITO/a-Si:H Junction
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AMORPHOUS SILICON IMAGE SENSOR : CHARACTERISTICS OF AN ITO/a-Si:H JUNCTION S. RI, H. FUJIOKA, K. TAKASAKI, AND K. FUJINO Advanced Technology Division., Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN ABSTRACT Indium tin oxide (ITO) film properties and hydrogenated amorphous silicon (a-Si:H) photo diode characteristics are described as a function of the oxygen partial pressure during ITO magnetron sputtering deposition. The a-Si:H and ITO bulk The photo diode has a Cr/a-Si:H/ITO structure. properties along with the a-Si:H/ITO interface properties are important to device performance. The ITO film deposited at high oxygen partial pressures had a smooth surface and the target did not tarnish during sputtering deposition. Therefore, with respect to stability and reproducibility, ITO deposition A high at high oxygen partial pressures seems to be quite effective. dark photo diode reverse current due to presence Of SiOx (x
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