An impact of La doping content on key physical properties of PbS spherical nanoparticles facilely synthesized via low te
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An impact of La doping content on key physical properties of PbS spherical nanoparticles facilely synthesized via low temperature chemical route Mohd. Shkir1,a , Kamlesh V. Chandekar2 , T. Alshahrani3 , Ashwani Kumar5 , Aslam Khan4 , S. AlFaify1,b 1 Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College
of Science, King Khalid University, Abha 61413, Saudi Arabia
2 Department of Physics, Rayat Shikshan Sanstha’s Karmaveer Bhaurao Patil College, Vashi, Navi Mumbai,
Maharashtra 400703, India
3 Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh 11671,
Saudi Arabia
4 King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia 5 Department of Physics, IK Gujral Punjab Technical University, Jalandhar 144603, India
Received: 30 June 2020 / Accepted: 1 September 2020 © Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Herein, we are reporting a facile chemical process to attain high-grade PbS spherical nanoparticles with diverse La doping contents at low temperature and named it as La@PbS SNPs. All the prepared La@PbS SNPs samples are of single-cubic phase with good crystalline nature confirmed from XRD and Rietveld refinement. Along with lattice constants several other structure-related parameters like size, dislocations, strain, stacking fault, density and specific surface area were calculated. EDX and SEM-e-mapping analyses confirm the presence of La in PbS with homogeneous distribution throughout the samples. For morphological investigation FESEM was employed, which approved the synthesis of SNPs of low dimensions at all La contents. FT-Raman analysis shows characteristics vibrational modes related to cubic-PbS and that is in good accordance with XRD outcomes. Energy gap values were determined through Kubelka–Munk procedure and noticed to lie between 1.01 to 1.103 eV (E 0.093 eV), this shows a very minute shift in energy gap with La doping in PbS. Dielectric constant (ε ), loss tangent, dielectric loss and impedance values were assessed and stable values of ε were noticed in 20–50 range and 5.0 wt % La@PbS SNPs possesses highest value. The ac electrical conductivity analysis revealed enhancement with La content in PbS. The correlated barrier hoping mechanism was involved in the prepared La@PbS SNPs. Furthermore, the DC electrical properties were studied and discussed the impact of La content.
Electronic supplementary material The online version of this article (https://doi.org/10.1140/epjp/s1336 0-020-00740-x) contains supplementary material, which is available to authorized users. a e-mail: [email protected] (corresponding author) b e-mail: [email protected] (corresponding author)
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1 Introduction Lead Sulphide (PbS) is a recognized semiconductor of narrow energy gap of 0.4 eV at 300 K and 18 nm large exciting Bohr radii among several other se
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